High mobility In[subscript 0.53]Ga[subscript 0.47]As quantum-well metal oxide semiconductor field effect transistor structures Citation

Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring resonators Appl. Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect Appl. Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal Appl. Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors Appl. Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors Appl. In this paper, we demonstrate high electron mobility In 0.53 Ga 0.47 As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al 2 O 3 (gate dielectric)/ In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As (barrier)/In 0.53 Ga 0.47 As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situ chemical vapor deposition (CVD) Al 2 O 3 displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al 2 O 3 , which indicates that CVD process resulted in a lower Al 2 O 3 / In 0.53 Ga 0.47 As interfacial defect density. A gate bias was applied to the structure with CVD Al 2 O 3 , and a peak mobility of 9243 cm 2 /V s at a carrier density of 2.7 Â 10 12 cm À2 was demonstrated for the structure with a 4 nm In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In 0.53 Ga 0.47 As MOSFET structures.